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r07ds1368ej0301 rev.3.01 page 1 of 10 jan 20, 2017 data sheet hat2210r silicon n channel power mosfet with schottky barrier diode high speed power switching features ? low on-resistance ? capable of 4.5 v gate drive ? high density mounting ? built-in schottky barrier diode outline absolute maximum ratings (ta = 25c) item symbol ratings unit mos1 mos2 & sbd drain to source voltage v dss 30 30 v gate to source voltage v gss 20 12 v drain current i d 7.5 8.0 a drain peak current i d(pulse) note1 60 64 a reverse drain current i dr 7.5 8.0 a channel dissipation pch note2 1.5 1.5 w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. 1 drive operation; w hen using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw ? 10 s renesas package code: prsp0008dd-d (package name: sop-8) 1, 3 source 2, 4 gate 5, 6, 7, 8 drain 1 2 3 4 5 6 7 8 g d g s mos1 mos2 and schottky barrier diode 2 7 4 3 s dd 1 56 d 8 r07ds1368ej0301 rev.3.01 jan 20, 2017
hat2210r r07ds1368ej0301 rev.3.01 page 2 of 10 jan 20, 2017 electrical characteristics ? mos1 (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 19 24 m ? i d = 3.75 a, v gs = 10 v note3 r ds(on) ? 27 40 m ? i d = 3.75 a, v gs = 4.5 v note3 forward transfer admittance |y fs | 9 15 ? s i d = 3.75 a, v ds = 10 v note3 input capacitance ciss ? 630 ? pf v ds = 10 v v gs = 0 f = 1mhz output capacitance coss ? 155 ? pf reverse transfer capacitance crss ? 57 ? pf total gate charge qg ? 4.6 ? nc v dd = 10 v v gs = 4.5 v i d = 7.5 a gate to source charge qgs ? 2.2 ? nc gate to drain charge qgd ? 1.2 ? nc turn-on delay time t d(on) ? 7 ? ns v gs =10 v, i d = 3.75 a v dd ? 10 v r l = 2.66 ? r g = 4.7 ? rise time t r ? 14 ? ns turn-off delay time t d(off) ? 36 ? ns fall time t f ? 3.4 ? ns body?drain diode forward voltage v df ? 0.85 1.11 v if = 7.5 a, v gs = 0 note3 body?drain diode reverse recovery time t rr ? 17 ? ns if =7.5 a, v gs = 0 dif/ dt = 100 a/ ? s notes: 3. pulse test ? mos 2 & schottky barrier diode (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = 12 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 m a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.4 ? 2.5 v v ds = 10 v, i d =1 ma static drain to source on state resistance r ds(on) ? 17 22 m ? i d =4 a, v gs = 10 v note3 r ds(on) ? 21 29 m ? i d = 4 a, v gs = 4.5 v note3 forward transfer admittance |y fs | 15 25 ? s i d = 4 a, v ds = 10 v note3 input capacitance ciss ? 1330 ? pf v ds = 10 v v gs = 0 f = 1mhz output capacitance coss ? 230 ? pf reverse transfer capacitance crss ? 92 ? pf total gate charge qg ? 11 ? nc v dd = 10 v v gs = 4.5 v i d = 8 a gate to source charge qgs ? 3.8 ? nc gate to drain charge qgd ? 3.2 ? nc turn-on delay time t d(on) ? 10 ? ns v gs = 10 v, i d = 4 a v dd ? 10 v r l = 2.5 ? r g = 4.7 ? rise time t r ? 16 ? ns turn-off delay time t d(off) ? 43 ? ns fall time t f ? 3.9 ? ns schottky barrier diode forward voltage v f ? 0.5 ? v if = 3.5 a, v gs = 0 note3 body?drain diode reverse recovery time t rr ? 15 ? ns if = 8 a, v gs = 0 dif/ dt = 100 a/ ? s notes: 3. pulse test
hat2210r r07ds1368ej0301 rev.3.01 page 3 of 10 jan 20, 2017 main characteristics ? mos 1 4.0 3.0 2.0 1.0 0 50 100 150 200 100 10 1 110 100 20 10 0510 20 10 0 246810 0.1 1000 v gs = 2.8 v tc = 75 c 25 c ? 25 c channel dissipation pch (w) ambient temperature ta ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 3.6 v 3.2 v 4.5 v 10 v 0.1 0.01 100 s 1 ms pw = 10 ms (1shot) ta = 25 c 1 shot pulse 10 s note 4 dc opera tion (pw 10 s) operation in this area is limited by r ds(on) test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw < 10 s note 4 : when using the glass epoxy board (fr4 40x40x1.6 mm) 200 150 100 50 0 48 12 16 20 0.1 1 10 10 1 i d = 5 a 2 a gate to source voltage v gs (v) drain to source saturation voltage vs gate to source voltage drain to source voltage v ds(on) (mv) drain current i d (a) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. drain current pulse test pulse test 1 a 10 0 100 v gs = 4.5 v 10 v
hat2210r r07ds1368ej0301 rev.3.01 page 4 of 10 jan 20, 2017 0.1 0.2 1 2 10 20 50 100 50 100 10 20 2 5 1 0.2 0.5 0.1 0.5 5 drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v ds = 10 v pulse test 25 c tc = ?25 c 75 c case temperature tc ( c) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. temperature 50 40 30 20 10 -25 0 25 50 75 100 125 150 0 i d = 1 a, 2 a 1 a, 2 a, 5 a v gs = 4.5 v 10 v pulse test 5 a 0.1 0.3 1 3 10 30 100 100 10 20 2 50 5 1 0 5 10 15 20 25 30 2000 5000 10000 1000 100 200 500 50 40 30 20 10 0 20 16 12 8 4 4 8 12 16 20 0 20 50 10 2 1 5 0.1 0.2 1 2 10 20 50 100 20 50 10 v gs = 0 f = 1 mhz ciss coss crss v dd = 25 v 10 v 5 v i d = 7.5 a v ds v gs t r t d(on) t d(off) reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics t f v gs = 10 v, v dd = 10 v rg =4.7 , duty 1 % 0.5 5 100 di / dt = 100 a / s v gs = 0, ta = 25 c v dd = 25 v 10 v 5 v
hat2210r r07ds1368ej0301 rev.3.01 page 5 of 10 jan 20, 2017 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40x40x1.6 mm) 0 0.4 0.8 1.2 1.6 2.0 20 10 v gs = 0v, 5 v 5 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test 10 v 10 8 6 4 2 25 50 75 100 125 150 0 channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating i ap = 7.5 a v dd = 15 v duty < 0.1 % rg > 50
hat2210r r07ds1368ej0301 rev.3.01 page 6 of 10 jan 20, 2017 ? mos 2 & schottky barrier diode 4.0 3.0 2.0 1.0 0 50 100 150 200 100 10 1 110 100 20 10 0510 20 10 0 246810 0.1 1000 v gs = 2.4 v tc = 75 c 25 c ? 25 c channel dissipation pch (w) ambient temperature ta ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v ds = 10 v pulse test 2.8 v 3.0 v 2.6 v 4.5 v 10 v 0.1 0.01 100 s 1 ms pw = 10 ms (1shot) ta = 25 c 1 shot pulse 10 s note 4 dc opera tion (pw 10 s) operation in this area is limited by r ds(on) test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw < 10 s note 4 : when using the glass epoxy board (fr4 40x40x1.6 mm) 200 150 100 50 0 24 6 812 10 0.1 1 10 10 1 i d = 5 a 2 a gate to source voltage v gs (v) drain to source saturation voltage vs gate to source voltage drain to source voltage v ds(on) (mv) drain current i d (a) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. drain current pulse test pulse test 1 a 10 0 100 v gs = 4.5 v 10 v
hat2210r r07ds1368ej0301 rev.3.01 page 7 of 10 jan 20, 2017 0.1 0.2 1 2 10 20 50 100 50 100 10 20 2 5 1 0.2 0.5 0.1 0.5 5 drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) v ds = 10 v pulse test 25 c tc = ?25 c 75 c case temperature tc ( c) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. temperature 50 40 30 20 10 -25 0 25 50 75 100 125 150 0 1 a, 2 a, 5 a v gs = 4.5 v 10 v pulse test 5 a 0.1 0.3 1 3 10 30 100 100 10 20 2 50 5 1 0 5 10 15 20 25 30 2000 5000 10000 1000 100 200 500 50 40 30 20 10 0 10 8 6 4 2 4 8 12 16 20 0 20 50 10 2 1 5 0.1 0.2 1 2 10 20 50 100 20 50 10 v gs = 0 f = 1 mhz ciss coss crss i d = 8 a v ds v gs t r t d(on) t d(off) reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics t f v gs = 10 v, v dd = 10 v rg =4.7 , duty 1 % 0.5 5 100 di / dt = 100 a / s v gs = 0, ta = 25 c v dd = 25 v 10 v 5 v i d = 1 a, 2 a v dd = 25 v 10 v 5 v
hat2210r r07ds1368ej0301 rev.3.01 page 8 of 10 jan 20, 2017 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40x40x1.6 mm) 0 0.4 0.8 1.2 1.6 2.0 20 10 v gs = 0v, 5 v 5 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test 10 v 10 8 6 4 2 25 50 75 100 125 150 0 channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating i ap = 8 a v dd = 15 v duty < 0.1 % rg > 50
hat2210r r07ds1368ej0301 rev.3.01 page 9 of 10 jan 20, 2017 ? common vin monitor d.u.t. vin 10 v r l v = 10 v ds tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg d. u. t rg i monitor ap v ds monitor v dd 50 vin 10 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss v dd avalanche test circuit avalanche waveform
hat2210r r07ds1368ej0301 rev.3.01 page 10 of 10 jan 20, 2017 package dimensions ordering information orderable part number quan tity shipping container HAT2210R-EL-E 2500 pcs taping note: for some grades, production may be terminated. please contact the renesa s sales office to check the state of production before ordering the product. p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8dav prsp0008dd-d renesas code jeita package code package name a 8 5 1 4 f b p c detail f terminal cross section 1.27 1.08 0.40 l 1 0.60 0.25 x 0.46 0.40 0.34 0.10 b p b 1 c 1 0.25 0.20 0.15 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z (ni/pd/au plating) 2. 1. dimensions " * 1(nom)" and " * 2" do not include mold flash. note) dimension " * 3" does not include trim offset. index mark a 1 l 1 l detail f y
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